DocumentCode :
558575
Title :
Design and baseband predistortion of a 43.5 dBm GaN Doherty amplifier for 3.5 GHz WiMAX applications
Author :
Fang, Jie ; Quaglia, R. ; Rubio, Jorge Moreno ; Camarchia, V. ; Pirola, M. ; Guerrieri, S. Donati ; Ghione, G.
Author_Institution :
Dipt. di Elettron., Politec. di Torino, Torino, Italy
fYear :
2011
fDate :
10-11 Oct. 2011
Firstpage :
256
Lastpage :
259
Abstract :
This paper presents the design concept and experimental evaluation of a Doherty Power Amplifier for WiMAX applications at 3.5 GHz. The amplifier, exploiting a packaged GaN HEMT from Cree Inc., shows a saturated output power exceeding 43.5 dBm (22 W), a Doherty high efficiency region of 7 dB, with a first peak efficiency of 57% and maximum drain efficiency of 65 % at the amplifier saturation. The amplifier has been characterized first at RF in continuous wave, and then with a WiMAX modulated input signal with 7dB PAPR, therefore allowing for a digital predistortion scheme to be extracted. The linearized amplifier shows more than 10dB ACPR reduction with respect to the unpredistorted case, while maintaining the same output power of 37.2 dBm (5W), and the same average efficiency of 51%.
Keywords :
III-V semiconductors; WiMax; high electron mobility transistors; network synthesis; power amplifiers; Doherty amplifier; Doherty power amplifier; GaN HEMT; WiMAX; amplifier saturation; baseband predistortion; design concept; digital predistortion scheme; frequency 3.5 GHz; linearized amplifier; power 5 W; Baseband; Gallium nitride; Mathematical model; Peak to average power ratio; Power generation; Predistortion; WiMAX; Doherty; GaN; baseband predistortion; power amplifier;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Integrated Circuits Conference (EuMIC), 2011 European
Conference_Location :
Manchester
Print_ISBN :
978-1-61284-236-3
Type :
conf
Filename :
6102897
Link To Document :
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