DocumentCode
558575
Title
Design and baseband predistortion of a 43.5 dBm GaN Doherty amplifier for 3.5 GHz WiMAX applications
Author
Fang, Jie ; Quaglia, R. ; Rubio, Jorge Moreno ; Camarchia, V. ; Pirola, M. ; Guerrieri, S. Donati ; Ghione, G.
Author_Institution
Dipt. di Elettron., Politec. di Torino, Torino, Italy
fYear
2011
fDate
10-11 Oct. 2011
Firstpage
256
Lastpage
259
Abstract
This paper presents the design concept and experimental evaluation of a Doherty Power Amplifier for WiMAX applications at 3.5 GHz. The amplifier, exploiting a packaged GaN HEMT from Cree Inc., shows a saturated output power exceeding 43.5 dBm (22 W), a Doherty high efficiency region of 7 dB, with a first peak efficiency of 57% and maximum drain efficiency of 65 % at the amplifier saturation. The amplifier has been characterized first at RF in continuous wave, and then with a WiMAX modulated input signal with 7dB PAPR, therefore allowing for a digital predistortion scheme to be extracted. The linearized amplifier shows more than 10dB ACPR reduction with respect to the unpredistorted case, while maintaining the same output power of 37.2 dBm (5W), and the same average efficiency of 51%.
Keywords
III-V semiconductors; WiMax; high electron mobility transistors; network synthesis; power amplifiers; Doherty amplifier; Doherty power amplifier; GaN HEMT; WiMAX; amplifier saturation; baseband predistortion; design concept; digital predistortion scheme; frequency 3.5 GHz; linearized amplifier; power 5 W; Baseband; Gallium nitride; Mathematical model; Peak to average power ratio; Power generation; Predistortion; WiMAX; Doherty; GaN; baseband predistortion; power amplifier;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Integrated Circuits Conference (EuMIC), 2011 European
Conference_Location
Manchester
Print_ISBN
978-1-61284-236-3
Type
conf
Filename
6102897
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