• DocumentCode
    558575
  • Title

    Design and baseband predistortion of a 43.5 dBm GaN Doherty amplifier for 3.5 GHz WiMAX applications

  • Author

    Fang, Jie ; Quaglia, R. ; Rubio, Jorge Moreno ; Camarchia, V. ; Pirola, M. ; Guerrieri, S. Donati ; Ghione, G.

  • Author_Institution
    Dipt. di Elettron., Politec. di Torino, Torino, Italy
  • fYear
    2011
  • fDate
    10-11 Oct. 2011
  • Firstpage
    256
  • Lastpage
    259
  • Abstract
    This paper presents the design concept and experimental evaluation of a Doherty Power Amplifier for WiMAX applications at 3.5 GHz. The amplifier, exploiting a packaged GaN HEMT from Cree Inc., shows a saturated output power exceeding 43.5 dBm (22 W), a Doherty high efficiency region of 7 dB, with a first peak efficiency of 57% and maximum drain efficiency of 65 % at the amplifier saturation. The amplifier has been characterized first at RF in continuous wave, and then with a WiMAX modulated input signal with 7dB PAPR, therefore allowing for a digital predistortion scheme to be extracted. The linearized amplifier shows more than 10dB ACPR reduction with respect to the unpredistorted case, while maintaining the same output power of 37.2 dBm (5W), and the same average efficiency of 51%.
  • Keywords
    III-V semiconductors; WiMax; high electron mobility transistors; network synthesis; power amplifiers; Doherty amplifier; Doherty power amplifier; GaN HEMT; WiMAX; amplifier saturation; baseband predistortion; design concept; digital predistortion scheme; frequency 3.5 GHz; linearized amplifier; power 5 W; Baseband; Gallium nitride; Mathematical model; Peak to average power ratio; Power generation; Predistortion; WiMAX; Doherty; GaN; baseband predistortion; power amplifier;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Integrated Circuits Conference (EuMIC), 2011 European
  • Conference_Location
    Manchester
  • Print_ISBN
    978-1-61284-236-3
  • Type

    conf

  • Filename
    6102897