DocumentCode
558580
Title
GaAs resistor model predicting harmonic, transient and breakdwon
Author
Zhu, Yu ; Wei, Cejun ; Klimashov, Oleksiy ; Yin, Hong ; Zhang, Cindy ; Bartle, Dylan
Author_Institution
Skyworks Solutions Inc., Woburn, MA, USA
fYear
2011
fDate
10-11 Oct. 2011
Firstpage
458
Lastpage
461
Abstract
A comprehensive nonlinear model of GaAs resistor is developed based on DC, pulse and power measurements. The model accounts for electrical and thermal feathers such as velocity saturation, self-heating and breakdown effects. The resistor nonlinearity is mainly due to the velocity saturation, and enhanced by self-heating effect. The model provides accurate performances in DC, transient and harmonic balance simulations, and is a useful tool for monolithic microwave integrated circuits (MMICs) development.
Keywords
III-V semiconductors; MMIC; gallium arsenide; resistors; semiconductor device models; GaAs; breakdown effects; harmonic balance simulations; monolithic microwave integrated circuits; nonlinear model; resistor model; resistor nonlinearity; self-heating effect; thermal feathers; velocity saturation; Electric breakdown; Gallium arsenide; Harmonic analysis; Integrated circuit modeling; Resistance; Resistors; Temperature measurement; MMICs; resistors; semiconductor device modeling; simulation; switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Integrated Circuits Conference (EuMIC), 2011 European
Conference_Location
Manchester
Print_ISBN
978-1-61284-236-3
Type
conf
Filename
6102902
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