Cascode MOSFET-MESFET RF power amplifier on 150nm SOI CMOS technology

Author

Ghajar, M. Reza ; Lepkowski, William ; Wilk, Seth ; Bakkaloglu, Bertan ; Boumaiza, Slim ; Thornton, Trevor

Author_Institution

Arizona State Univ., Tempe, AZ, USA

fYear

2011

fDate

10-11 Oct. 2011

Firstpage

316

Lastpage

319

Abstract

Metal-semiconductor-field-effect-transistors (MESFETs) have been fabricated using a 150 nm partially depleted silicon-on-insulator CMOS technology. A peak f_T of 40 GHz and peak breakdown voltages of up to 12V were measured. Comparatively, the CMOS transistors on the same process have a maximum steady-state voltage limit of 1.95V. TOM3 model for MESFET developed in ADS. The demonstrated high cut-off frequency and high voltage operation capability make the SOI MESFET a good device candidate for integrated radio frequency (RF) power amplifiers (PA). A cascoded MOS-MES RF PA architecture is proposed and simulated in ADS using the TOM3 model. Simulation results show 75% PAE while delivering 24dBm output power.

Keywords

CMOS integrated circuits; MOSFET; Schottky gate field effect transistors; power amplifiers; radiofrequency amplifiers; silicon-on-insulator; ADS simulation; CMOS transistors; SOI CMOS technology; TOM3 model; Triquint Own model; cascode MOSFET-MESFET RF power amplifier; frequency 40 GHz; metal-semiconductor-field-effect-transistors; size 150 nm; steady-state voltage limit; voltage 1.95 V; CMOS integrated circuits; Logic gates; MESFETs; Power amplifiers; Radio frequency; Semiconductor device modeling; MESFETs; Power Amplifiers (PA); silicon-on-insulator (SOI);

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuits Conference (EuMIC), 2011 European

Conference_Location

Manchester

Print_ISBN

978-1-61284-236-3

Type

conf

Filename

6102911