• DocumentCode
    559584
  • Title

    Convex corner compensation for a compact seismic mass with high aspect ratio using anisotropic wet etching of (100) silicon

  • Author

    YU, Jyh-Cheng

  • Author_Institution
    Nat. Kaohsiung First Univ. of Sci. & Technol., Kaohsiung, Taiwan
  • fYear
    2011
  • fDate
    11-13 May 2011
  • Firstpage
    197
  • Lastpage
    199
  • Abstract
    This paper reports a novel convex corner compensation design for a compact seismic mass of high aspect ratio using KOH etching of (100) silicon. Anisotropic wet etching is often applied to fabricate a seismic mass due to cost advantage. Dimension of the convex corner compensation pattern is in proportional to etching depth, which restrain the miniature of seismic mass and supporting beams. If the width of the seismic is too small, overlap of compensation pattern occurs to cause a compensation failure. This study presents a corner compensation for a mesa with high aspect ratio using <;100>; oriented compensating bands augmented with a mandatory separation and a <;110>;-oriented beam to the truncated <;100>; bands due to the overlap of adjacent compensation patterns. An empirical equation is presented from the simulation of anisotropic etching using Intellisuite. The design can produce a satisfactory wet etching mesa with the aspect ratio of 0.6, while a typical <;100>; oriented compensating bands can only applied to a mesa with a largest aspect ratio of 0.35. A mesa is etched using 30%, 80°C KOH to verify the design feasibility.
  • Keywords
    design engineering; etching; silicon; (100) silicon; Intellisuite; KOH etching; anisotropic wet etching; compact seismic mass; compensation failure; convex corner compensation; high aspect ratio;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Design, Test, Integration and Packaging of MEMS/MOEMS (DTIP), 2011 Symposium on
  • Conference_Location
    Aix-en-Provence
  • Print_ISBN
    978-1-61284-905-8
  • Type

    conf

  • Filename
    6107993