• DocumentCode
    559602
  • Title

    Measurement of electrical properties of materials under the oxide layer by microwave-AFM probe

  • Author

    Zhang, Lan ; Ju, Yang ; Hosoi, Atsushi ; Fujimoto, Akifumi

  • Author_Institution
    Dept. of Mech. Sci. & Eng., Nagoya Univ., Nagoya, Japan
  • fYear
    2011
  • fDate
    11-13 May 2011
  • Firstpage
    334
  • Lastpage
    338
  • Abstract
    The capability of a new AFM-based apparatus named microwave atomic force microscope (M-AFM) which can measure the topography and electrical information of samples simultaneously was investigated. Some special samples with different thicknesses of dielectric film (SiO2) which plays the role of oxide layer creating on the material surface were fabricated. The measurement of electrical properties of materials under the oxide layer by the M-AFM was studied. The results indicate that the M-AFM can lead the microwave signal penetrate the oxide film (SiO2) with a limited thickness of 60 nm and obtain the electrical information of underlying materials.
  • Keywords
    atomic force microscopy; dielectric thin films; electric variables measurement; silicon compounds; SiO2; dielectric film; electrical properties; microwave-atomic force microscopy; oxide layer; size 60 nm; Films; Microscopy; Microwave imaging; Microwave measurements; Probes; Voltage measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Design, Test, Integration and Packaging of MEMS/MOEMS (DTIP), 2011 Symposium on
  • Conference_Location
    Aix-en-Provence
  • Print_ISBN
    978-1-61284-905-8
  • Type

    conf

  • Filename
    6108014
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=559602