DocumentCode :
559718
Title :
Terahertz injection locked oscillation in plasmon-resonant transistors
Author :
Watanabe, T. ; Tanimoto, Yudai ; Satou, Akira ; Otsuji, Taiichi
Author_Institution :
RIEC: Res. Inst. of Electr. Commun., Tohoku Univ., Sendai, Japan
fYear :
2011
fDate :
Oct. 30 2011-Nov. 2 2011
Firstpage :
1
Lastpage :
2
Abstract :
We experimentally and analytically investigated the possibility of injection locked oscillation in a plasmon-resonant dual-grating-gate high-electron mobility transistor to the difference terahertz frequency component of photomixed dual CW laser irradiation. Although the perfect injection locking has not yet been obtained the device model we newly formulate will lead to find practical solutions of successful operation.
Keywords :
high electron mobility transistors; injection locked oscillators; plasmons; submillimetre wave oscillators; submillimetre wave transistors; device model; high electron mobility transistor; photomixed dual CW laser irradiation; plasmon-resonant transistors; terahertz frequency component; terahertz injection locked oscillation; Gratings; Indium tin oxide; Lasers; Nonlinear optical devices; Optical variables measurement; Stimulated emission;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microopics Conference (MOC), 2011 17th
Conference_Location :
Sendai
Print_ISBN :
978-1-4577-1344-6
Type :
conf
Filename :
6110270
Link To Document :
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