Lasing behavior analysis in GaN-based 2D Photonic Crystal Surface Emitting Lasers with localized defect

Author

Wu, Tzeng-Tsong ; Weng, Peng-Shiang ; Hou, Yen-Ju ; Lin, You-Ching ; Chen, Chi-Cheng ; Lu, Tien-Chang ; Kuo, Hao-Chung ; Wang, Shing-Chung

Author_Institution

Dept. of Photonic & Inst. of Electro-Opt. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

fYear

2011

fDate

Oct. 30 2011-Nov. 2 2011

Firstpage

1

Lastpage

2

Abstract

The GaN-based two-dimensional (2D) Photonic Crystal Surface Emitting Lasers (PCSELs) with different type of localized defect have been fabricated and investigated. According to the different cavity sizes, the threshold energy density and lasing wavelength of PCSELs could be investigated by micro-Photoluminescence (μ-PL) system. Besides, by using the Multiple Scattering Method, the threshold gain of different defect cavities of PCSELs could be calculated precisely and well matched to the experimental results.

Keywords

III-V semiconductors; gallium compounds; laser cavity resonators; photoluminescence; photonic crystals; surface emitting lasers; wide band gap semiconductors; 2D photonic crystal surface emitting lasers; GaN; cavity sizes; defect cavities; lasing behavior analysis; localized defect; micro-photoluminescence system; multiple scattering method; threshold energy density; threshold gain; GaN; Multiple Scattering Method; photonic crystal; surface emitting laser;

fLanguage

English

Publisher

ieee

Conference_Titel

Microopics Conference (MOC), 2011 17th

Conference_Location

Sendai

Print_ISBN

978-1-4577-1344-6

Type

conf

Filename

6110283