Numerical analysis of gain saturation characteristics of semiconductor optical amplifier using tunnel injection structure

Author

Sorimachi, Mikio ; Higa, Yasutaka ; Nishinome, Takuya ; Iwasaki, Hajime ; Miyamoto, Tomoyuki

Author_Institution

Photonics Integration Syst. Res. Center, Tokyo Inst. of Technol., Yokohama, Japan

fYear

2011

fDate

Oct. 30 2011-Nov. 2 2011

Firstpage

1

Lastpage

2

Abstract

We provide the numerical analysis result of the gain saturation characteristics of a semiconductor optical amplifier (SOA) using the tunnel injection structure that we proposed. The tunnel injection SOA has the features of the carrier reservoir and the control of the carrier relaxation speed. The analysis suggested that the tunnel injection SOA improves the output power by 4.9 dB at 100 Gbps PRBS without signal distortion. Such an advantage is based on the mechanism of the filling of carriers during the light amplification that reduces the carriers.

Keywords

amplification; numerical analysis; optical distortion; semiconductor optical amplifiers; bit rate 100 Gbit/s; carrier relaxation speed; carrier reservoir; gain saturation; light amplification; numerical analysis; pseudorandom bit sequence; semiconductor optical amplifier; signal distortion; tunnel injection structure; Optical signal processing; Photonics; Semiconductor optical amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microopics Conference (MOC), 2011 17th

Conference_Location

Sendai

Print_ISBN

978-1-4577-1344-6

Type

conf

Filename

6110290