Title :
Anisotropic nonlinear photoluminescence in a GaAs quantum-well waveguide
Author :
Nakahora, T. ; Nizamuddin, A. ; Kuwamura, Y. ; Nagao, Y. ; Katsuki, N. ; Hotani, T. ; Katsuyama, T.
Author_Institution :
Grad. Sch. of Eng., Univ. of Fukui, Fukui, Japan
fDate :
Oct. 30 2011-Nov. 2 2011
Abstract :
The polarization dependence of the nonlinear photoluminescence in a GaAs quantum-well wavelength was studied. Although the saturation onset light intensity is the same for different polarizations, the peak shift and half width of the luminescence are influenced by the output polarizations. These results indicate the importance of the light-hole-related transition.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; light polarisation; optical waveguides; photoluminescence; semiconductor quantum wells; Al0.17Ga0.83As-Al0.13Ga0.87As-Al0.13Ga0.87As-Al0.17Ga0.83As-GaAs; anisotropic nonlinear photoluminescence; light hole-related transition; peak shift; polarization dependence; quantum well waveguide; saturation onset light intensity;
Conference_Titel :
Microopics Conference (MOC), 2011 17th
Conference_Location :
Sendai
Print_ISBN :
978-1-4577-1344-6
