Title :
Cost-Effective Schottky-Barrier Diode Array With Ni–Silicidation Accessing Low Power Phase-Change Memory
Author :
Yan Liu ; Chao Zhang ; Zhitang Song ; Bo Liu ; Guanping Wu ; Jia Xu ; Lianhong Wang ; Lei Wang ; Zuoya Yang ; Songlin Feng
Author_Institution :
State Key Lab. of Functional Mater. for Inf., Shanghai Inst. of Microsyst. & Inf. Technol., Shanghai, China
Abstract :
A cost-effective fabrication of Schottky-barrier (SB) diode steering element for low power phase-change memory (PCM) application is realized. While superior drivability in conventional PN diode array, SB diode array with 0.0193- μm2 (5F2), performing higher switching speed, sufficient drive current density of ~ 26.30 mA/μm2, disturbance immunity, and lower power consumption has been manufactured under 40-nm standard complementary metal oxide semiconductor technology. Simultaneously, different performance specifications, including integration scheme, JON/JOFF ratio, temperature characteristics, and scalability have been studied in detail and compared in two categories of accessing diode arrays. It manifests that the scaled SB diode array is suitable for full operation of PCM.
Keywords :
CMOS memory circuits; Schottky barriers; Schottky diodes; low-power electronics; nickel; phase change memories; Ni; PCM; PN diode array; SB diode steering element; complementary metal oxide semiconductor technology; cost-effective fabrication; cost-effective schottky-barrier diode array; current density; disturbance immunity; integration scheme; low power phase-change memory; lower power consumption; nickel-silicidation; scaled SB diode array; size 40 nm; temperature characteristics; Arrays; Junctions; Phase change materials; Power demand; Schottky diodes; Temperature; Cost-effective; Schottky diode array; low power consumption; phase-change memory (PCM);
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2013.2296591
