Title :
Coherent Injection-Locking of Long-Cavity Colorless Laser Diodes With Low Front-Facet Reflectance for DWDM-PON Transmission
Author :
Shih-Ying Lin ; Yu-Chieh Chi ; Yu-Chuan Su ; Jy-Wang Liao ; Hai-Lin Wang ; Gong-Cheng Lin ; Gong-Ru Lin
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
Long-cavity colorless laser diodes with different front-facet antireflection (AR) coatings are employed to perform the wavelength injection-locked ON-OFF-keying (OOK) data transmission. By changing front-facet reflectance of laser diode from 0.2% to 1.2%, the received OOK data enhance its Q factor by 6.3% and reduces its bit error rate (BER) by more than two orders of magnitude, which benefits from the improved signal-to-noise ratio and extinction ratio by up to 8.0%. Enlarging the injection-locking power from -6 to -3 dBm essentially helps the long-cavity colorless laser diode to promote its receiving power sensitivity from -27.9 to -29.2 dBm at BER of 10-9. However, the similar device with lower AR reflectance shows an opposite trend. The injection-locking-induced enhancement is limited within a frequency region controlled by the injection power, which results from a large disparity between continuous-wave injection and stimulated emission inside the long-cavity colorless laser diode. At same biased current and front-facet reflectance, a higher injection level provides a larger modulation throughput at a cost of decreasing bandwidth. The overinjection causes a limitation on frequency bandwidth of the long-cavity colorless laser diodes with lower front-facet reflectance. The numerical simulations with modified rate equations for the injection-locked long-cavity colorless laser diode with lower front-facet reflectance also elucidate that the transmission degrades distinctly at larger injection powers.
Keywords :
amplitude shift keying; antireflection coatings; error statistics; laser mode locking; numerical analysis; passive optical networks; semiconductor lasers; wavelength division multiplexing; AR coatings; BER; DWDM-PON transmission; ON-OFF-keying; OOK; bit error rate; coherent injection-locking; continuous-wave injection; data transmission; front-facet antireflection coatings; front-facet reflectance; injection-locked laser diode; injection-locking-induced enhancement; long-cavity colorless laser diodes; numerical simulations; wavelength injection-locked laser; Bit error rate; Cavity resonators; Coatings; Diode lasers; Optical transmitters; Reflectivity; Wavelength division multiplexing; Coherent injection-locking; colorless; dense-wavelength-division-multiplexed passive optical network (DWDM-PON); front-facet reflectance; laser diode; long cavity;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/JSTQE.2013.2238896