DocumentCode :
56121
Title :
Single-Error-Correction and Double-Adjacent-Error-Correction Code for Simultaneous Testing of Data Bit and Check Bit Arrays in Memories
Author :
Sanguhn Cha ; Hongil Yoon
Author_Institution :
Yonsei Univ., Seoul, South Korea
Volume :
14
Issue :
1
fYear :
2014
fDate :
Mar-14
Firstpage :
529
Lastpage :
535
Abstract :
In this paper, a new single-error-correction and double-adjacent-error-correction (SEC-DAEC) code is proposed for simultaneous testing of the most general memory fault models in both data bit and check bit arrays of memories. Simultaneous testing of data bit and check bit arrays eliminates the test time and hardware overheads required for separate check bit array tests. In order to test data bit and check bit arrays simultaneously, the proposed SEC-DAEC code generates the identical data background patterns for data bit and check bit arrays. The testable faults using the proposed SEC-DAEC code are the most general memory fault models such as single-cell faults and interword and intraword coupling faults. Simultaneous testing of data bit and check bit arrays using the proposed SEC-DAEC codes brings significant decreases of about 27.3%, 17.9%, and 11.1% in the time required for memory array tests for 16, 32, and 64 data bits per word, respectively. In addition, the number of ones in the H-matrix of the proposed SEC-DAEC code is brought close to the theoretical minimum number, thereby reducing the complexity of the check bit generator.
Keywords :
error correction codes; memory architecture; radiation hardening (electronics); testing; SEC DAEC code; check bit arrays; data bit arrays; double adjacent error correction code; interword coupling faults; intraword coupling faults; memory array tests; memory fault models; simultaneous testing; single cell faults; single error correction code; Arrays; Error correction codes; Generators; Hardware; Materials reliability; Testing; Vectors; Error correction code; fault model; memory test; word-oriented memory;
fLanguage :
English
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
Publisher :
ieee
ISSN :
1530-4388
Type :
jour
DOI :
10.1109/TDMR.2014.2299595
Filename :
6709746
Link To Document :
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