DocumentCode :
562160
Title :
Doping geometries for 40G carrier-depletion-based silicon optical modulators
Author :
Yu, Hui ; Bogaerts, Wim ; Komorowska, Katarzyna ; Baets, Roel ; Korn, Dietmar ; Alloatti, Luca ; Hillerkuss, David ; Koos, Christian ; Freude, Wolfgang ; Leuthold, Juerg ; Van Campenhout, Joris ; Verheyen, Peter ; Wouters, Johan ; Moelants, Myriam ; Absil
Author_Institution :
Dept. of Inf. Technol., Ghent Univ., Ghent, Belgium
fYear :
2012
fDate :
4-8 March 2012
Firstpage :
1
Lastpage :
3
Abstract :
A comparison is preformed between carrier-depletion modulators with different doping patterns to reach low VπLπ = 0.62 V·cm at DC with interdigitated and lateral PN junctions respectively, but also show modulation at 35 Gbit/s (errorfree).
Keywords :
geometrical optics; optical modulation; optoelectronic devices; p-n junctions; semiconductor doping; silicon; PN junctions; carrier-depletion-based silicon optical modulators; doping geometries; doping patterns; Doping; Junctions; Optical device fabrication; Optical modulation; Optical waveguides; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optical Fiber Communication Conference and Exposition (OFC/NFOEC), 2012 and the National Fiber Optic Engineers Conference
Conference_Location :
Los Angeles, CA
ISSN :
pending
Print_ISBN :
978-1-4673-0262-3
Type :
conf
Filename :
6192208
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=562160
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