DocumentCode :
562188
Title :
An electrically pumped Ge-on-Si laser
Author :
Michel, J. ; Camacho-Aguilera, R.E. ; Yan Cai ; Patel, Naresh ; Bessette, J.T. ; Romagnoli, M. ; Dutt, B. ; Kimerling, L.C.
Author_Institution :
Massachusetts Inst. of Technol., Cambridge, MA, USA
fYear :
2012
fDate :
4-8 March 2012
Firstpage :
1
Lastpage :
3
Abstract :
We present the first CMOS compatible, electrically pumped Fabry-Perot Ge laser with larger than 1mW output power and a gain spectrum width of nearly 200nm in the range from 1520nm to 1700nm.
Keywords :
CMOS integrated circuits; Ge-Si alloys; semiconductor lasers; CMOS compatible laser; Ge-Si; electrically pumped Fabry-Perot laser; electrically pumped laser; power 1 mW; wavelength 1520 nm to 1700 nm; Doping; Laser excitation; Laser transitions; Optical waveguides; Pump lasers; Silicon; Waveguide lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optical Fiber Communication Conference and Exposition (OFC/NFOEC), 2012 and the National Fiber Optic Engineers Conference
Conference_Location :
Los Angeles, CA
ISSN :
pending
Print_ISBN :
978-1-4673-0262-3
Type :
conf
Filename :
6192236
Link To Document :
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