Title :
Using the thermal-field measurements to evaluation the parameters of the MC based on AS
Author :
Kychak, Vasyl ; Slobodian, Ivan
Author_Institution :
Vinnytsia Nat. Tech. Univ., Vinnytsia, Ukraine
Abstract :
In this paper the thermal-field measurements for evaluating the parameters of the memory cells (MC) based on amorphous semiconductors (AS) are used for the analysis of the temperature dependence of differential electrical conductivity of memory cells.
Keywords :
amorphous semiconductors; electrical conductivity; random-access storage; thermal variables measurement; AS; MC; amorphous semiconductors; differential electrical conductivity; memory cells; parameter evaluation; thermal-field measurements; Biomedical optical imaging; Optical variables measurement; Photonic band gap; Memory cell; amorphous semi-conductors; electrical conductivity;
Conference_Titel :
Modern Problems of Radio Engineering Telecommunications and Computer Science (TCSET), 2012 International Conference on
Conference_Location :
Lviv-Slavske
Print_ISBN :
978-1-4673-0283-8
