Title :
Properties of porous silicon in ultra-violet spectrum
Author :
Kharabet, Ievgen
Author_Institution :
Microelectron. Dept., Nat. Tech. Univ. of Ukraine “Kyiv Polytech. Inst.”, Kiev, Ukraine
Abstract :
In this paper the properties of porous silicon in ultra-violet spectrum and their probable application are observed.
Keywords :
elemental semiconductors; photoluminescence; porous semiconductors; silicon; spectral line shift; ultraviolet spectra; Si; photoluminescence; porous silicon; spectral shift; ultraviolet spectrum; Electronic mail; Microelectronics; Porous silicon; photoluminescence; spectrum shift; ultra-violet spectrum;
Conference_Titel :
Modern Problems of Radio Engineering Telecommunications and Computer Science (TCSET), 2012 International Conference on
Conference_Location :
Lviv-Slavske
Print_ISBN :
978-1-4673-0283-8
