DocumentCode
562838
Title
Designing of SET based 5-stage and 3-stage ring oscillator with RC phase delay circuit
Author
Lourts Deepak, A. ; Dhulipalla, Likhitha ; Shaik, Chand Basha ; Chaitra, S.K.
Author_Institution
VLSI Syst. Design, M.S. Ramaiah Sch. of Adv. Studies, Bangalore, India
fYear
2012
fDate
30-31 March 2012
Firstpage
606
Lastpage
610
Abstract
In future, the necessity of ultra low power based circuit will be increased and physical channel length of the device will be decreased. In nanometer regime, CMOS based circuits may not be used due to problem in its fundamental material. To achieve ultra low power device in nanometer region can be obtained by utilizing Single Electron Transistor (SET). In most of the electronic circuits, clocks are playing a critical role to operate the device with the help of oscillatory circuit and cause the more power dissipation. In this paper, we designed the 5stage and 3stage ring oscillator to generate high frequencies like 45GHz and 70 GHz respectively with ultra low power by means of SET and result obtained as 44.6 GHz and 68.4 GHz respectively. Resistor and capacitor based phase shift delay circuit has been used for phase shifting operation at each stage of the design.
Keywords
CMOS integrated circuits; RC circuits; delay circuits; microwave integrated circuits; microwave oscillators; microwave phase shifters; single electron transistors; CMOS-based circuits; RC phase delay circuit; SET-based 3-stage ring oscillator; SET-based 5-stage ring oscillator; capacitor-based phase shift delay circuit; electronic circuits; frequency 45 GHz; frequency 70 GHz; nanometer regime; nanometer region; oscillatory circuit; phase shifting operation; physical channel length; power dissipation; resistor-based phase shift delay circuit; single electron transistor; ultra low power device; ultra low power-based circuit; Frequency measurement; Gain measurement; Lead; Logic gates; Oscillators; Phase measurement; Resonant frequency; RO with RC phase shift circuit; Ring oscillator; Single Electron Transistor;
fLanguage
English
Publisher
ieee
Conference_Titel
Advances in Engineering, Science and Management (ICAESM), 2012 International Conference on
Conference_Location
Nagapattinam, Tamil Nadu
Print_ISBN
978-1-4673-0213-5
Type
conf
Filename
6216071
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