Differentiated space allocation for wear leveling on phase-change memory-based storage device

Author

Soojun Im ; Dongkun Shin

Author_Institution

Dept. of Comput. Sci. & Eng., Sungkyunkwan Univ., Suwon, South Korea

Volume

60

Issue

1

fYear

2014

fDate

Feb-14

Firstpage

45

Lastpage

51

Abstract

Phase-change memory (PCM) is the best candidate for the storage device of next-generation mobile consumer electronics. PCM has the potential to replace NAND flash memory, due to its non-volatility, in-place programmability, and low power consumption. Even though the lifetime of PCM is longer than that of flash memory, wear leveling is still required to cope with the non-uniformity of storage workload or malicious attack. In this paper, a novel wear-leveling algorithm for PCM storage is proposed, where more physical pages are allocated to frequently updated logical pages, to balance the wear counts of PCM cells. In comparison with the previous techniques, the proposed algorithm improved the lifetime of PCM by at maximum 14 times and on average 8 times¹.

Keywords

consumer electronics; low-power electronics; phase change memories; wear; NAND flash memory; PCM cells; differentiated space allocation; low power consumption; next-generation mobile consumer electronics; phase-change memory-based storage device; storage workload nonuniformity; wear-leveling algorithm; Benchmark testing; File systems; Flash memories; Memory management; Phase change materials; Random access memory; Resource management; Non-Volatile Memory; Phase Change Memory; Storage Class Memory; Wear-Leveling;

fLanguage

English

Journal_Title

Consumer Electronics, IEEE Transactions on

Publisher

ieee

ISSN

0098-3063

Type

jour

DOI

10.1109/TCE.2014.6780924

Filename

6780924