Title :
A new accurate model of the IGFET for CAD applications
Author :
Boothroyd, A.R. ; El-Mansy, Y.A.
Author_Institution :
Dept. of Electron., Carleton Univ., Ottawa, ON, Canada
Abstract :
As presented above, the IGFET model does not include channel-shortening effects; L is a constant channel length. The modelling of these effects is treated specifically in Paper 3.2, the results of which, in association with the present model, give a complete representation of the device. For comparison between the model and measured device characteristics, devices should here be chosen with sufficiently long channels for channel-shortening effects to be negligible in this respect.
Keywords :
insulated gate field effect transistors; semiconductor device models; technology CAD (electronics); CAD applications; IGFET model; channel-shortening effects; constant channel length; device characteristics; Capacitance; Current measurement; Educational institutions; Logic gates; Quantum mechanics; Semiconductor device modeling;
Conference_Titel :
Electron Devices Meeting (IEDM), 1974 International
Conference_Location :
Washington, DC
DOI :
10.1109/IEDM.1974.6219604
