DocumentCode :
563412
Title :
Two-phase charge coupled linear imaging devices with self-aligned implanted barrier
Author :
Kim, Choong-Ki
Author_Institution :
R&D Lab., Fairchild Camera & Instrum. Corp., Palo Alto, CA, USA
fYear :
1974
fDate :
9-11 Dec. 1974
Firstpage :
55
Lastpage :
58
Abstract :
A buried channel, two-phase CCD analog shift register with self-aligned implanted barriers has shown high charge transfer efficiency with standard 5 volt clocks at 10 MHz bit rates. Two linear image sensors which employ these CCD registers demonstrate the ease of use and the high quality of image reproduction that results from these properties.
Keywords :
CCD image sensors; charge exchange; image processing; shift registers; CCD registers; bit rates; buried channel; frequency 10 MHz; high charge transfer efficiency; image reproduction; linear image sensors; self-aligned implanted barrier; two-phase CCD analog shift register; two-phase charge coupled linear imaging devices; voltage 5 V; Bit rate; Charge coupled devices; Clocks; Logic gates; Performance evaluation; Registers; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting (IEDM), 1974 International
Conference_Location :
Washington, DC
ISSN :
0163-1918
Type :
conf
DOI :
10.1109/IEDM.1974.6219610
Filename :
6219610
Link To Document :
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