DocumentCode :
563416
Title :
Efficient semiconductor Anti-Stokes light convertors
Author :
Beneking, H. ; Schul, G. ; Mischel, P.
Author_Institution :
Inst. of Semicond. Electron., Tech. Univ. Aachen, Aachen, Germany
fYear :
1974
fDate :
9-11 Dec. 1974
Firstpage :
69
Lastpage :
72
Abstract :
A semiconductor Anti-Stokes light convertor consisting of six layers (p-GaAs, n-GaAs, n-GaxAl1-xAs, p-Gay Al1-yAs, p-GaxAl1-xAs, p-GaAs) has been fabricated using liquid phase epitaxy from Ga-rich melts. The n- and p-type GaAs forms a photodiode, which is integrated with a GaAlAs light emitting diode. Avalanche multiplication of photoexcited carriers is used to increase the LED driving current and thus the total conversion efficiency of the device.
Keywords :
light emitting diodes; liquid phase epitaxial growth; LED driving current; avalanche multiplication; light emitting diode; liquid phase epitaxy; photoexcited carriers; semiconductor anti-stokes light convertors; Converters; Detectors; Epitaxial growth; Gallium arsenide; Light emitting diodes; Photonics; Semiconductor diodes;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting (IEDM), 1974 International
Conference_Location :
Washington, DC
ISSN :
0163-1918
Type :
conf
DOI :
10.1109/IEDM.1974.6219614
Filename :
6219614
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=563416
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