• DocumentCode
    563416
  • Title

    Efficient semiconductor Anti-Stokes light convertors

  • Author

    Beneking, H. ; Schul, G. ; Mischel, P.

  • Author_Institution
    Inst. of Semicond. Electron., Tech. Univ. Aachen, Aachen, Germany
  • fYear
    1974
  • fDate
    9-11 Dec. 1974
  • Firstpage
    69
  • Lastpage
    72
  • Abstract
    A semiconductor Anti-Stokes light convertor consisting of six layers (p-GaAs, n-GaAs, n-GaxAl1-xAs, p-Gay Al1-yAs, p-GaxAl1-xAs, p-GaAs) has been fabricated using liquid phase epitaxy from Ga-rich melts. The n- and p-type GaAs forms a photodiode, which is integrated with a GaAlAs light emitting diode. Avalanche multiplication of photoexcited carriers is used to increase the LED driving current and thus the total conversion efficiency of the device.
  • Keywords
    light emitting diodes; liquid phase epitaxial growth; LED driving current; avalanche multiplication; light emitting diode; liquid phase epitaxy; photoexcited carriers; semiconductor anti-stokes light convertors; Converters; Detectors; Epitaxial growth; Gallium arsenide; Light emitting diodes; Photonics; Semiconductor diodes;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 1974 International
  • Conference_Location
    Washington, DC
  • ISSN
    0163-1918
  • Type

    conf

  • DOI
    10.1109/IEDM.1974.6219614
  • Filename
    6219614
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=563416