Title :
A high efficiency CW transferred-electron oscillator with optimized doping profile
Author :
Kamei, K. ; Eastman, L.F.
Author_Institution :
Dept. of Electr. Eng., Cornell Univ., Ithaca, NY, USA
Abstract :
This study is aimed at helping to design X-band C.W. transferred electron oscillators with higher performance. It is shown by calculations that the efficiency in C.W. operation is drastically improved by quantitatively controlling the doping profile to account for the temperature profile, and further governed by carrier concentration times layer thickness (nxℓ) product and diode size. Relations among nxℓ product, diode size, and doping gradient are defined. The calculations are substantiated by experiments.
Keywords :
Gunn oscillators; carrier density; diodes; doping profiles; CW operation; NXL product; X-band CW transferred electron oscillators design; carrier concentration; diode size; doping gradient; layer thickness product; optimized doping profile; quantitatively control; temperature profile; Abstracts; Anodes; Current measurement; Heating; IP networks; Temperature measurement;
Conference_Titel :
Electron Devices Meeting (IEDM), 1974 International
Conference_Location :
Washington, DC
DOI :
10.1109/IEDM.1974.6219629
