Title :
Effect of temperature on device admittance of GaAs and Si IMPATT diodes
Author :
Takayama, Yoichiro
Author_Institution :
Central Res. Labs., Nippon Electr. Co. Ltd., Kawasaki, Japan
Abstract :
Small-signal admittance characteristics of X-band Si p++nn+, GaAs Mnn+ (conventional), and GaAs Mn1n2n+ (hi-lo Read) IMPATT diodes were measured at various junction temperatures for different dc current levels. It was shown that GaAs Mnn+ diode is superior to Si p+nn+ diode in temperature characteristics and that GaAs Mnn+ diode has smaller temperature coefficients in the device admittance as compared to GaAs Read diode. Small-signal theoretical calculation was also carried out for GaAs conventional and Read diodes having the same parameters as used in the experiment. Reasonable agreement was found in the temperature dependence of the device admittance between theoretical and experimental results.
Keywords :
IMPATT diodes; elemental semiconductors; gallium arsenide; silicon; GaAs; IMPATT diodes; Read diodes; Si; dc current levels; device admittance; junction temperatures; small-signal admittance characteristics; small-signal theoretical calculation; temperature characteristics; Abstracts; Admittance; Artificial neural networks; Current measurement; Electric breakdown; Gallium arsenide; Temperature measurement;
Conference_Titel :
Electron Devices Meeting (IEDM), 1974 International
Conference_Location :
Washington, DC
DOI :
10.1109/IEDM.1974.6219631
