DocumentCode
563429
Title
Premature collection mode in IMPATT diodes
Author
Kuvås, R.L. ; Schroeder, W.E.
Author_Institution
Sci. Center, Rockwell Int., Thousand Oaks, CA, USA
fYear
1974
fDate
9-11 Dec. 1974
Firstpage
134
Lastpage
137
Abstract
Experimental efficiencies of up to 35.5 percent have been reported for Read-type GaAs diodes, whereas realistic theoretical calculations have predicted an upper limit of approximately 30 percent for the conversion efficiency of IMPATT diodes. The concept of a premature collection mode is shown to resolve this discrepancy by predicting maximum efficiencies close to 40 percent. Premature collection refers to large-signal conditions where the modulation of the drift width is sufficiently large to result in collection of the avalanche current pulse at drift angles smaller than the small-signal angle. The onset of premature collection is accompanied by a substantial increase in power output because of a more favorable drift angle, and by high noise because of the high rf levels involved. The hysteresis in the tuning characteristic resulting from the discontinuous transition has been observed experimentally.
Keywords
IMPATT diodes; gallium arsenide; GaAs; IMPATT diodes; Read-type diodes; avalanche current pulse; conversion efficiency; drift angles; drift width; high rf levels; large-signal conditions; small-signal angle; tuning characteristic; Abstracts; Graphics; MONOS devices; Noise measurement; Radio frequency; Switches; Voltage measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting (IEDM), 1974 International
Conference_Location
Washington, DC
ISSN
0163-1918
Type
conf
DOI
10.1109/IEDM.1974.6219632
Filename
6219632
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