• DocumentCode
    563429
  • Title

    Premature collection mode in IMPATT diodes

  • Author

    Kuvås, R.L. ; Schroeder, W.E.

  • Author_Institution
    Sci. Center, Rockwell Int., Thousand Oaks, CA, USA
  • fYear
    1974
  • fDate
    9-11 Dec. 1974
  • Firstpage
    134
  • Lastpage
    137
  • Abstract
    Experimental efficiencies of up to 35.5 percent have been reported for Read-type GaAs diodes, whereas realistic theoretical calculations have predicted an upper limit of approximately 30 percent for the conversion efficiency of IMPATT diodes. The concept of a premature collection mode is shown to resolve this discrepancy by predicting maximum efficiencies close to 40 percent. Premature collection refers to large-signal conditions where the modulation of the drift width is sufficiently large to result in collection of the avalanche current pulse at drift angles smaller than the small-signal angle. The onset of premature collection is accompanied by a substantial increase in power output because of a more favorable drift angle, and by high noise because of the high rf levels involved. The hysteresis in the tuning characteristic resulting from the discontinuous transition has been observed experimentally.
  • Keywords
    IMPATT diodes; gallium arsenide; GaAs; IMPATT diodes; Read-type diodes; avalanche current pulse; conversion efficiency; drift angles; drift width; high rf levels; large-signal conditions; small-signal angle; tuning characteristic; Abstracts; Graphics; MONOS devices; Noise measurement; Radio frequency; Switches; Voltage measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 1974 International
  • Conference_Location
    Washington, DC
  • ISSN
    0163-1918
  • Type

    conf

  • DOI
    10.1109/IEDM.1974.6219632
  • Filename
    6219632