GaAs-Ga1−xAlxAs double-heterostructure distributed feedback diode lasers

Author

Nakamura, Mitsutoshi ; Aiki, K. ; Umeda, J. ; Yariv, Amnon ; Yen, H.W. ; Morikawa, T.

Author_Institution

Central Res. Lab., Hitachi Ltd., Tokyo, Japan

fYear

1974

fDate

9-11 Dec. 1974

Firstpage

88

Lastpage

90

Abstract

Lasing characteristics of GaAs-Ga_1-xAl_xAs double-heterostructure distributed feedback diode lasers are investigated at 80-100 K under electrical pumping. The main subjects studied here are the spectrum and mode of the distributed feedback laser and its temperature characteristics. Single longitudinal mode oscillation is observed at wavelengths which are determined by the corrugation period. The temperature dependence of the wavelength is about 1/3 that of the cleaved Fabry-Perot laser made from the same wafer.

Keywords

III-V semiconductors; aluminium compounds; distributed feedback lasers; gallium arsenide; semiconductor lasers; Fabry-Perot laser; GaAs-Ga_1-xAl_xAs; corrugation period; double-heterostructure distributed feedback diode lasers; electrical pumping; lasing characteristics; single longitudinal mode oscillation; temperature 80 K to 100 K; temperature characteristics; temperature dependence; Epitaxial growth; Gallium arsenide; Laser modes; Semiconductor lasers; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 1974 International

Conference_Location

Washington, DC

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1974.6219640

Filename

6219640