Distributed feedback laser in CdS

Author

Aoyagi, Yoshinobu ; Namba, Susumu

Author_Institution

Inst. of Phys. & Chem. Res., Wako, Japan

fYear

1974

fDate

9-11 Dec. 1974

Firstpage

91

Lastpage

94

Abstract

Distributed feedback laser was observed in CdS with a simple DFB structure under electron beam excitation. The lasing characteristics such as the temperature dependence and the time dependence of the laser were examined. The line width of the laser spectrum was found to be less than 0.8 Å. Compared to a conventional laser, the lasing wavelength was insensitive to temperature. The dependence of the lasing wavelength on temperature is explained by the change of the refractive index. In some samples the DFB lasing was observed to occur only at the start of the excitation pulse and the pulse width was much shorter than that of a conventional laser. This phenomenon is explained by a gain switching mechanism.

Keywords

II-VI semiconductors; cadmium compounds; distributed feedback lasers; excited states; refractive index; semiconductor lasers; CdS; DFB lasing; DFB structure; distributed feedback laser; electron beam excitation; excitation pulse; gain switching mechanism; laser spectrum; lasing characteristics; lasing temperature; lasing wavelength; pulse width; refractive index; temperature dependence; time dependence; Distributed feedback devices; Laser excitation; Laser feedback; Laser theory; Surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 1974 International

Conference_Location

Washington, DC

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1974.6219641

Filename

6219641