• DocumentCode
    563439
  • Title

    High density COS/MOS 1024 bit static RAM

  • Author

    Dingwall, Andrew G F ; Strieker, R.E.

  • Author_Institution
    Solid State Technol. Center, RCA Corp., Somerville, NJ, USA
  • fYear
    1974
  • fDate
    9-11 Dec. 1974
  • Firstpage
    101
  • Lastpage
    103
  • Abstract
    A static 1024 × 1 self-aligned silicon gate COS/MOS Random Access Memory has been developed using `self-registry´ techniques to achieve high packing density. The techniques developed permitted a 7500 transistor COS/MOS memory circuit to be fabricated in a 0.134 × 0.168 inch2 chip, with a 13.4 mil2 cell. Such packing density is approximately 5 times that of conventional metal gate COS/MOS circuits.
  • Keywords
    MOS memory circuits; SRAM chips; Si; high density COS-MOS static RAM; high packing density; metal gate COS-MOS circuits; self-aligned silicon gate COS-MOS random access memory; self-registry techniques; transistor COS-MOS memory circuit; word length 1024 bit; Abstracts; Cities and towns; Lead; Logic gates; Process control; Random access memory; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 1974 International
  • Conference_Location
    Washington, DC
  • ISSN
    0163-1918
  • Type

    conf

  • DOI
    10.1109/IEDM.1974.6219643
  • Filename
    6219643
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=563439