DocumentCode
563440
Title
The test methods for some failure modes of 1K MOS RAM
Author
Kodama, Koji ; Kasai, Yujiro
Author_Institution
Electron. Comput. Div., Tokyo Shibaura Electr. Co., Ltd., Tokyo, Japan
fYear
1974
fDate
9-11 Dec. 1974
Firstpage
104
Lastpage
107
Abstract
There are many failure modes in 1103 type MOS RAM´S. Some chips have very unique and unfamiliar failure modes. These chips pass both shipping and incoming tests but often fail at the memory system test and significantly decrease the reliability of the system. To eliminate these chips and improve the reliability, we examined the failure modes of them and found effective test methods. By applying these technologies, we have established the good correlation between the chip test and the system test, and achieved the high reliability of the memory systems.
Keywords
MOS memory circuits; integrated circuit reliability; integrated circuit testing; random-access storage; MOS RAM; chip test; failure modes; memory system reliability; memory system test; storage capacity 1 Kbit; test methods; Abstracts; Arrays; Leakage current; MOSFETs; Random access memory;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting (IEDM), 1974 International
Conference_Location
Washington, DC
ISSN
0163-1918
Type
conf
DOI
10.1109/IEDM.1974.6219644
Filename
6219644
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