Title :
Inherent memory effects in ZnS:Mn thin film EL devices
Author :
Yamauchi, Y. ; Takeda, M. ; Kakihara, Y. ; Yoshida, M. ; Kawaguchi, J. ; Kishishita, H. ; Nakata, Y. ; Inoguchi, T. ; Mito, S.
Author_Institution :
Central Res. Lab., SHARP Corp., Tenri, Japan
Abstract :
Remarkable hysteresis were found to excist in a thin film multilayer EL device consisting of a ZnS:Mn active layer sandwiched between a pair of Y2O3, insulating layers. Due to its particular construction, hysteresis was observed between the brightness vs. amplitude of the exciting alternating voltage, which is instrumental to realizing the memory function. Electrical Writing and Erasing are possible by the amplitude modulation of the sustaining voltage. The typical memory margin observed here is about 10 to 30 volts (rms) under operating voltage of 170 to 280 volts (rms) with frequency of 1 to 5 kHz. Gray scale display as well as Optical Writing are possible.
Keywords :
amplitude modulation; electroluminescent devices; memory architecture; thin film devices; yttrium compounds; zinc compounds; Y2O3; ZnS:Mn; active layer; amplitude modulation; electrical erasing; electrical writing; frequency 1 kHz to 5 kHz; gray scale display; insulating layers; memory effects; memory function; memory margin; operating voltage; optical writing; thin film multilayer EL device; voltage 10 V to 30 V; voltage 170 V to 280 V; Abstracts; Gray-scale; Instruments; Optical coupling; Optical films; Optical imaging;
Conference_Titel :
Electron Devices Meeting (IEDM), 1974 International
Conference_Location :
Washington, DC
DOI :
10.1109/IEDM.1974.6219664
