Title :
Red electro-luminescence from ZnS:Mn-F thin film
Author :
Yamauchi, Y. ; Kishishita, H. ; Takeda, M. ; Inoguchi, T. ; Mito, S.
Author_Institution :
Central Res. Lab., SHARP Corp., Tenri, Japan
Abstract :
Thin film EL device made of ZnS:TbF3, Mn by means of electron beam evaporation yield red light (peak wave length 7000 Å) at a brightness of 60 Fl. The color of the light varied from orange to red according to the concentration ratio of TbF3 to Mn. Two emission bands were observed, namely at 5850 Å and 7000 Å. Since the orange band is obviously due to the localized center of Mn2+, our experimental results support that the red emission band is due to the localized center of Mn2+, our experimental results support that the red emission bands is due to the localized center of Mn-F.
Keywords :
II-VI semiconductors; electroluminescent devices; fluorine; manganese; terbium compounds; thin film devices; wide band gap semiconductors; zinc compounds; ZnS:Mn-F; ZnS:TbF3; electron beam evaporation yield red light; red electroluminescence; red emission band; thin film EL device; Abstracts; Artificial intelligence; Detectors; Films; Manganese; Read only memory; Temperature dependence;
Conference_Titel :
Electron Devices Meeting (IEDM), 1974 International
Conference_Location :
Washington, DC
DOI :
10.1109/IEDM.1974.6219665
