Application of the anisotropic etching of silicon to the development of complementary structures

A new technology based on the anisotropic etching of silicon is presented for the realization of complementary devices. Anisotropic etching is performed on (100) oriented slices, where large areas corresponding to complete devices are etched down at a depth of a few microns. The etching step is discussed and optimized. This basic structure is subsequently applied to two new methods for developing silicon-gate complementary MOS transistors. The advantages of the technology are discussed and compared to other processes. Other new possible applications are presented.