DocumentCode
563468
Title
High frequency MOS digital capacitor
Author
Brown, D.M. ; Engeler, W.E. ; Tiemann, J.J.
Author_Institution
Corp. R&D, Gen. Electr. Co., Schenectady, NY, USA
fYear
1974
fDate
9-11 Dec. 1974
Firstpage
523
Lastpage
526
Abstract
A MOS digital capacitor capable of operation at VHF and UHF frequencies is described. This new device is made up of a parallel combination of MOS capacitors on a single chip each of which can be individually switched and statically maintained at two distinct RF capacitance values, the maximum binary state being the high frequency MOS inversion capacity and the minimum being that of a deep depletion MOS device. Switching is accomplished by on chip MOSFETs.
Keywords
MOS capacitors; MOSFET; UHF field effect transistors; VHF devices; RF capacitance values; UHF frequency; VHF frequency; chip MOSFET switching; deep depletion MOS device; high frequency MOS digital capacitor; high frequency MOS inversion capacity; Abstracts; Capacitance; Capacitors; FETs; MOS capacitors; Radio frequency; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting (IEDM), 1974 International
Conference_Location
Washington, DC
ISSN
0163-1918
Type
conf
DOI
10.1109/IEDM.1974.6219676
Filename
6219676
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