Title :
High frequency MOS digital capacitor
Author :
Brown, D.M. ; Engeler, W.E. ; Tiemann, J.J.
Author_Institution :
Corp. R&D, Gen. Electr. Co., Schenectady, NY, USA
Abstract :
A MOS digital capacitor capable of operation at VHF and UHF frequencies is described. This new device is made up of a parallel combination of MOS capacitors on a single chip each of which can be individually switched and statically maintained at two distinct RF capacitance values, the maximum binary state being the high frequency MOS inversion capacity and the minimum being that of a deep depletion MOS device. Switching is accomplished by on chip MOSFETs.
Keywords :
MOS capacitors; MOSFET; UHF field effect transistors; VHF devices; RF capacitance values; UHF frequency; VHF frequency; chip MOSFET switching; deep depletion MOS device; high frequency MOS digital capacitor; high frequency MOS inversion capacity; Abstracts; Capacitance; Capacitors; FETs; MOS capacitors; Radio frequency; Switches;
Conference_Titel :
Electron Devices Meeting (IEDM), 1974 International
Conference_Location :
Washington, DC
DOI :
10.1109/IEDM.1974.6219676
