Title :
Model and linear applications of the JIGFET (Junction and Insulated Gate Field-Effect Transistor)
Author :
Sansen, W. ; Six, P. ; Verbraeken, C. ; Van Overstraeten, R.
Author_Institution :
Lab. “Fys. en Elektron. van de Halfgeleiders”, Katholieke Univ. Leuven, Heverlee, Belgium
Abstract :
The JIGFET is a novel type of depletion MOS transistor formed by the implantation of a channel between source and drain. Because of its high bulk-transconductance, its linearity and low noise, the JIGFET has been thoroughly studied and modelled for linear applications. The model based on the depletion approximation has been found to be in good agreement with the solution of the Poisson´s equation and the experimental results in both the depletion and the inversion regions.
Keywords :
MOSFET; Poisson equation; electrical conductivity; JIGFET; Poisson equation; depletion MOS transistor; depletion approximation; high bulk-transconductance; linear applications; source-drain channel; Capacitance; Computational modeling; Load modeling; Logic gates; Mathematical model; Neodymium; Semiconductor process modeling;
Conference_Titel :
Electron Devices Meeting (IEDM), 1974 International
Conference_Location :
Washington, DC
DOI :
10.1109/IEDM.1974.6219680
