Proposal of improved mosfet to drive bipolar transistors in hybrid IC

The purpose of this paper is a proposal of an improved MOST to realize driving many bipolar transistors by an MOST in hybrid integrated circuits skilfully which is fabricated by IC technique, setting a buried layer between channel inversion layer and substrate as an output electrode. This device has an inflection point in output I-V characteristics, the special operation of which is stable and the conductance of this point is high value and this device has high voltage gain when it operates under the source to ground. This means possibility to connect this device with bipolar transistors successfully in hybrid IC. The preparation method of this device is briefly explained and the reason of this device having inflection point in unique I-V characteristics is also discussed.