DocumentCode
563484
Title
GaAs 8 GHz-band high power FET
Author
Fukuta, M. ; Ishikawa, H. ; Suyama, K. ; Maeda, M.
Author_Institution
Fujitsu Labs. Ltd., Kawasaki, Japan
fYear
1974
fDate
9-11 Dec. 1974
Firstpage
285
Lastpage
287
Abstract
A GaAs power FET exhibiting 0.7 W saturation output power and 45% drain efficiency applying 6 V at 8 GHz, has been developed. An interdigitated source and drain electrode, and an overlaid gate electrode to connect in parallel 52 gates, are introduced to achieve 2 μm long and 2600μm wide Schottky gate FET.
Keywords
III-V semiconductors; Schottky gate field effect transistors; electrodes; gallium arsenide; microwave field effect transistors; power field effect transistors; Schottky gate FET; drain efficiency; drain electrode; frequency 8 GHz; high power FET; interdigitated source; overlaid gate electrode; power 0.7 W; voltage 6 V; Abstracts; Contacts; Cutoff frequency; FETs; Gallium arsenide; Logic gates; RNA;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting (IEDM), 1974 International
Conference_Location
Washington, DC
ISSN
0163-1918
Type
conf
DOI
10.1109/IEDM.1974.6219746
Filename
6219746
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