DocumentCode
563486
Title
High speed GaAs-MeSFET differential amplifier stage with integrated current source
Author
Beneking, H. ; Kohn, E.
Author_Institution
Inst. of Semicond. Electron., Tech. Univ. Aachen, Aachen, Germany
fYear
1974
fDate
9-11 Dec. 1974
Firstpage
292
Lastpage
295
Abstract
A high speed FET-differential amplifier stage for application in 50Ω-systems, fabricated on isolating GaAs-substrate with gasphase grown n-epitaxial layers, is presented. A current source realized by means of a third FET is integrated on the chip and directly coupled to the source contacts of the differential pair. An output risetime below 6ops and a CMRR of 26 db is reached. Switching power is 185 mW.
Keywords
MESFET integrated circuits; Schottky gate field effect transistors; constant current sources; differential amplifiers; electrical contacts; field effect analogue integrated circuits; high-speed integrated circuits; semiconductor epitaxial layers; 50Ω-system application; GaAs; current source; differential pair source contacts; gasphase grown n-epitaxial layers; high speed GaAs-MeSFET differential amplifier stage; output risetime; resistance 50 ohm; switching power; Abstracts; Capacitance; FETs; Face; Generators; Logic gates; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting (IEDM), 1974 International
Conference_Location
Washington, DC
ISSN
0163-1918
Type
conf
DOI
10.1109/IEDM.1974.6219748
Filename
6219748
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