Title :
Effects of nonequilibrium velocity-field characteristics on the performance of GaAs and InP field-effect transistors
Author :
Maloney, T.J. ; Frey, J.
Author_Institution :
Cornell Univ., Ithaca, NY, USA
Abstract :
Monte Carlo calculations of nonequilibrium electron transport in InP and GaAs short channel field-effect transistors have been performed. The influence upon transistor performance of such transient effects as velocity overshoot is discussed for each material and is compared with the influence of the respective equilibrium velocity-field curves. A two-dimensional method for computing the properties of InP FETs is also discussed. Ranges of channel lengths for which each material can be expected to be superior are discussed.
Keywords :
III-V semiconductors; Monte Carlo methods; electron mobility; field effect transistors; gallium arsenide; indium compounds; GaAs; InP; Monte Carlo calculations; channel lengths; equilibrium velocity-field curves; field effect transistor performance; nonequilibrium electron transport; nonequilibrium velocity-field characteristics; short channel field effect transistors; transient effects; two-dimensional method; velocity overshoot; Abstracts; Charge measurement; Computational modeling; Density measurement; Gallium arsenide; Indium phosphide; Logic gates;
Conference_Titel :
Electron Devices Meeting (IEDM), 1974 International
Conference_Location :
Washington, DC
DOI :
10.1109/IEDM.1974.6219749
