Effects of nonequilibrium velocity-field characteristics on the performance of GaAs and InP field-effect transistors

Author

Maloney, T.J. ; Frey, J.

Author_Institution

Cornell Univ., Ithaca, NY, USA

fYear

1974

fDate

9-11 Dec. 1974

Firstpage

296

Lastpage

298

Abstract

Monte Carlo calculations of nonequilibrium electron transport in InP and GaAs short channel field-effect transistors have been performed. The influence upon transistor performance of such transient effects as velocity overshoot is discussed for each material and is compared with the influence of the respective equilibrium velocity-field curves. A two-dimensional method for computing the properties of InP FETs is also discussed. Ranges of channel lengths for which each material can be expected to be superior are discussed.

Keywords

III-V semiconductors; Monte Carlo methods; electron mobility; field effect transistors; gallium arsenide; indium compounds; GaAs; InP; Monte Carlo calculations; channel lengths; equilibrium velocity-field curves; field effect transistor performance; nonequilibrium electron transport; nonequilibrium velocity-field characteristics; short channel field effect transistors; transient effects; two-dimensional method; velocity overshoot; Abstracts; Charge measurement; Computational modeling; Density measurement; Gallium arsenide; Indium phosphide; Logic gates;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 1974 International

Conference_Location

Washington, DC

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1974.6219749

Filename

6219749