Title :
CCD´s for transversal filter applications
Author :
Ibrahim, A. ; Sellars, L. ; Foxall, T. ; Steenaart, W.
Author_Institution :
Bell-Northern Res., Ottawa, ON, Canada
Abstract :
Two approaches to design CCD transversal filters using two-level polysilicon gate technology will be described. The design and performance will be compared.
Keywords :
charge-coupled devices; elemental semiconductors; silicon; transversal filters; CCD transversal filter design; Si; charge-coupled devices; two-level polysilicon gate technology; Abstracts; Attenuation measurement; Clocks; Delay; Electric potential; Sensors; Time frequency analysis;
Conference_Titel :
Electron Devices Meeting (IEDM), 1974 International
Conference_Location :
Washington, DC
DOI :
10.1109/IEDM.1974.6219755
