Transfer efficiency of e-beam fabricated C4D´S

In this work a quantitative analysis of the low frequency loss mechanisms of the Conductively Connected CCD will be presented. It will be shown that the loss is caused by changes in the shape and height of the implanted potential carrier. The loss is approximately inversely proportional to feature size and directly proportional to oxide thickness. Experimental data on electron beam fabricated devices will be given that shows good agreement with the theoretical calculations. It will be shown that for a 500 Å oxide, usable devices were made with areas as small as 125 μ² (.2mil²) per bit.