Title :
A novel bipolar device with low emitter impurity concentration structure
Author :
Yagi, H. ; Tsuyuki, T. ; Koma, K. ; Miyazawa, Y.
Author_Institution :
Atsugi Plant, SONY Corp., Atsugi, Japan
Abstract :
A novel high performance passivated bipolar device has been developed. The structure of this device, called here a “LEC structure” is characterized by low emitter impurity concentration and electrical impurity concentration and electrical barrier in the emitter, which causes superior device performance and productivity. The experimental results agreed with proposed model, and technology of this device were compared with conventional double diffused transistor.
Keywords :
bipolar transistors; impurities; LEC structure; LEC transistor; conventional double diffused transistor; electrical barrier; high performance passivated bipolar device; low emitter impurity concentration structure; Abstracts; Boron; Epitaxial growth; Impurities; Junctions; Performance evaluation; Transistors;
Conference_Titel :
Electron Devices Meeting (IEDM), 1974 International
Conference_Location :
Washington, DC
DOI :
10.1109/IEDM.1974.6219761
