DocumentCode
563497
Title
A novel bipolar device with low emitter impurity concentration structure
Author
Yagi, H. ; Tsuyuki, T. ; Koma, K. ; Miyazawa, Y.
Author_Institution
Atsugi Plant, SONY Corp., Atsugi, Japan
fYear
1974
fDate
9-11 Dec. 1974
Firstpage
262
Lastpage
265
Abstract
A novel high performance passivated bipolar device has been developed. The structure of this device, called here a “LEC structure” is characterized by low emitter impurity concentration and electrical impurity concentration and electrical barrier in the emitter, which causes superior device performance and productivity. The experimental results agreed with proposed model, and technology of this device were compared with conventional double diffused transistor.
Keywords
bipolar transistors; impurities; LEC structure; LEC transistor; conventional double diffused transistor; electrical barrier; high performance passivated bipolar device; low emitter impurity concentration structure; Abstracts; Boron; Epitaxial growth; Impurities; Junctions; Performance evaluation; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting (IEDM), 1974 International
Conference_Location
Washington, DC
ISSN
0163-1918
Type
conf
DOI
10.1109/IEDM.1974.6219761
Filename
6219761
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