DocumentCode :
563498
Title :
Anodic aluminum isolation
Author :
Cook, Bob ; Scherrer, Raymond E.
Author_Institution :
Int. Telephone & Telegraph Semicond., West Palm Beach, FL, USA
fYear :
1974
fDate :
9-11 Dec. 1974
Firstpage :
266
Lastpage :
269
Abstract :
In anodic aluminum isolation the selective N+ sub collector is replaced by a blanket N+ epi layer. The P+ isolation is replaced by a silicon-etch, aluminum-evap-oration and partial-anodization. The aluminum down in the etched moats is electrically continuous and is partially anodized swelling to fill the moats, but still retaining a core of aluminum which can be used for a ground buss. The aluminum up on the active areas is electrically isolated, not anodized and stripped in a selective-etch leaving a reasonably planar structure. A2I gives higher yields and better performance in less space at lower costs.
Keywords :
aluminium; bipolar integrated circuits; Al; N+ sub collector; P+ isolation; aluminum-evaporation; anodic aluminum isolation; bipolar integrated circuits; blanket N+ epi layer; ground buss; moats; partial-anodization; silicon-etch; Abstracts; Aluminum; Atmosphere; Boron; Current measurement; Standards; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting (IEDM), 1974 International
Conference_Location :
Washington, DC
ISSN :
0163-1918
Type :
conf
DOI :
10.1109/IEDM.1974.6219762
Filename :
6219762
Link To Document :
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