• DocumentCode
    56350
  • Title

    Foreword Special Issue on Variation Aware Technology and Circuit Co-Design

  • Author

    Song, Stanley S. C. ; Shang, Huiling ; Ikeda, Shuji

  • Author_Institution
    ,
  • Volume
    62
  • Issue
    6
  • fYear
    2015
  • fDate
    Jun-15
  • Firstpage
    1680
  • Lastpage
    1681
  • Abstract
    Once considered mature and commodity technology, CMOS Si technology keeps revamping itself as a collection of most innovative technologies known to humanity at this given time. Beyond conventional vanilla scale of SiON/Poly planar bulk Si technology, lab-level experiments constantly become manufacturing reality, such as high-k, metal gate, FDSOI, FinFET, and many exotic patterning technologies. This rapid pace of new technology introduction to CMOS technology, however, requires much more sophisticated optimization of process, device, and circuit design, in order to maximize return on investment. Careful optimization of process technology, device structure, layout, and circuit design in a holistic manner enables significant performance improvement while reducing overall power consumption with the least amount of area penalty.
  • Keywords
    CMOS integrated circuits; CMOS technology; Circuit simulation; Circuit synthesis; FinFETs; Special issues and sections;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2015.2425031
  • Filename
    7103317