DocumentCode
56350
Title
Foreword Special Issue on Variation Aware Technology and Circuit Co-Design
Author
Song, Stanley S. C. ; Shang, Huiling ; Ikeda, Shuji
Author_Institution
,
Volume
62
Issue
6
fYear
2015
fDate
Jun-15
Firstpage
1680
Lastpage
1681
Abstract
Once considered mature and commodity technology, CMOS Si technology keeps revamping itself as a collection of most innovative technologies known to humanity at this given time. Beyond conventional vanilla scale of SiON/Poly planar bulk Si technology, lab-level experiments constantly become manufacturing reality, such as high-k , metal gate, FDSOI, FinFET, and many exotic patterning technologies. This rapid pace of new technology introduction to CMOS technology, however, requires much more sophisticated optimization of process, device, and circuit design, in order to maximize return on investment. Careful optimization of process technology, device structure, layout, and circuit design in a holistic manner enables significant performance improvement while reducing overall power consumption with the least amount of area penalty.
Keywords
CMOS integrated circuits; CMOS technology; Circuit simulation; Circuit synthesis; FinFETs; Special issues and sections;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2015.2425031
Filename
7103317
Link To Document