Title :
High-speed transistor with double base diffusion
Author :
Magdo, Steven ; Magdo, Ingrid
Author_Institution :
Syst. Products Div., IBM, Hopewell Junction, NY, USA
Abstract :
The general trend in bipolar integrated circuits is to increase circuit speed. Most present high-speed transistor switching circuits are voltage driven; thus device base resistance plays the most important role in limiting circuit speed.
Keywords :
bipolar integrated circuits; bipolar transistor circuits; diffusion; high-speed techniques; switching circuits; bipolar integrated circuits; circuit speed; device base resistance; double base diffusion; high-speed transistor switching circuits; Capacitance; RNA; Switches;
Conference_Titel :
Electron Devices Meeting (IEDM), 1974 International
Conference_Location :
Washington, DC
DOI :
10.1109/IEDM.1974.6219764
