DocumentCode :
563516
Title :
Low-voltage tunnel-injection electroluminescent devices
Author :
Clark, M.D. ; Baidyaroy, S. ; Ryan, F. ; Ballantyne, J.M.
Author_Institution :
Field of Appl. Phys., Cornell Univ., Ithaca, NY, USA
fYear :
1974
fDate :
9-11 Dec. 1974
Firstpage :
340
Lastpage :
343
Abstract :
Tunnel-injection electroluminescence has been observed in Al-Al2O3-GaAs and Pt-Al2O3-CdS devices formed by vacuum deposition of thin films onto n-type semiconductor crystals. Results show a luminescence voltage threshold comparable to the semiconductor bandgap, and high hole injection efficiency.
Keywords :
III-V semiconductors; aluminium compounds; cadmium compounds; electroluminescent devices; gallium arsenide; platinum compounds; semiconductor thin films; vacuum deposited coatings; AlAl2O3-GaAs; PtAl2O3-CdS; low-voltage tunnel-injection electroluminescent devices; luminescence voltage threshold; n-type semiconductor crystals; semiconductor bandgap; thin film vacuum deposition; Abstracts; Educational institutions; Electroluminescent devices; Fabrication; Metals; Physics; Surface treatment;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting (IEDM), 1974 International
Conference_Location :
Washington, DC
ISSN :
0163-1918
Type :
conf
DOI :
10.1109/IEDM.1974.6219781
Filename :
6219781
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=563516
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