Control and design of MOSFET low-level currents by ion-implantation

This paper discusses the numerical calculation of log n_SF (surface electron density) - V_G(gate voltage) curves and experiments. By compensating for the distribution tail of the main impurity by the opposite type impurity, the log n_SF - V_G curves can be shifted in an almost parallel manner. Fabrication of MOSFET with a desired value of residual current is possible by implanting a sufficient amount of phosphorus first, then a second boron layer near the surface.