Title :
Intrinsic junctions and their role in SCL transistors
Author_Institution :
Syst. Products Div., IBM, Hopewell Junction, NY, USA
Abstract :
The space-charge-limited (SCL) transistor, as described in previous publications, consists of high-low and asymmetric junctions formed by diffusing n and p type impurities into a nearly intrinsic silicon substrate. These junctions are “intrinsic” since one side of them is nearly intrinsic with an extrinsic Debye length (LD) in the range of 10 μm on the low-doped side. Previous publications on high-low and asymmetric junctions are either Incomplete or not applicable to intrinsic junctions because they are based on the depletion and charge neutrality approximations of the bipolar theory.
Keywords :
semiconductor junctions; space charge; transistors; SCL transistors; asymmetric junction; bipolar theory; extrinsic Debye length; high-low junction; intrinsic junctions; intrinsic silicon substrate; size 10 mum; space-charge-limited transistor; Abstracts; Junctions; Neodymium; Substrates;
Conference_Titel :
Electron Devices Meeting (IEDM), 1974 International
Conference_Location :
Washington, DC
DOI :
10.1109/IEDM.1974.6219795
