• DocumentCode
    563529
  • Title

    Intrinsic junctions and their role in SCL transistors

  • Author

    Magdo, Steven

  • Author_Institution
    Syst. Products Div., IBM, Hopewell Junction, NY, USA
  • fYear
    1974
  • fDate
    9-11 Dec. 1974
  • Firstpage
    426
  • Lastpage
    430
  • Abstract
    The space-charge-limited (SCL) transistor, as described in previous publications, consists of high-low and asymmetric junctions formed by diffusing n and p type impurities into a nearly intrinsic silicon substrate. These junctions are “intrinsic” since one side of them is nearly intrinsic with an extrinsic Debye length (LD) in the range of 10 μm on the low-doped side. Previous publications on high-low and asymmetric junctions are either Incomplete or not applicable to intrinsic junctions because they are based on the depletion and charge neutrality approximations of the bipolar theory.
  • Keywords
    semiconductor junctions; space charge; transistors; SCL transistors; asymmetric junction; bipolar theory; extrinsic Debye length; high-low junction; intrinsic junctions; intrinsic silicon substrate; size 10 mum; space-charge-limited transistor; Abstracts; Junctions; Neodymium; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 1974 International
  • Conference_Location
    Washington, DC
  • ISSN
    0163-1918
  • Type

    conf

  • DOI
    10.1109/IEDM.1974.6219795
  • Filename
    6219795
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=563529