Characterization of doping profiles in impatt diodes by spreading resistance and secondary ion mass spectroscopy

Summary form only given. Doping profile measurements in mm wave double drift silicon IMPATT diodes are described. The diodes were fabricated in thin lightly doped P- epitaxial films deposited on P⁺ boron doped silicon substrates by ion implantation. The applications and limitations of the Spreading Resistance and Secondary Ion Mass Spectroscopy for doping analysis of very thin structures are discussed. It is shown that by a suitable combination of the two techniques in a complementary fashion one may characterize the doping in a device such as double drift IMPATT diode. The proposed method gives quantitative and rapid information useful for device modeling and as a control in device processing and material selection.