• DocumentCode
    563544
  • Title

    New method of passivating GaAs WITH Al2O3

  • Author

    Singh, R. ; Hartnagel, H.

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Univ. of Newcastle upon Tyne, Newcastle upon Tyne, UK
  • fYear
    1974
  • fDate
    9-11 Dec. 1974
  • Firstpage
    576
  • Lastpage
    578
  • Abstract
    1200 Å thick layers have been grown on n-GaAs by slowing evaporating Al though a low pressure of O2. The resulting interface state density N35 was measured around 1012 cm-2 (eV)-1, i.e about 5 times smaller than those of native oxides on GaAs. N35 and the charge capture time are given across some parts of the energy gap near the flat-band level and N35 shows a peak near the conduction band. The flat-band voltage is + 0.l Volt. which indicates an immobile charge density of 6 × 10 cm-2. Very slow traps show a similar density.
  • Keywords
    aluminium compounds; gallium arsenide; passivation; Al2O3; GaAs; charge capture time; conduction band; energy gap; flat-band voltage; immobile charge density; interface state density; thick layers; very slow traps; Abstracts; Capacitance; Face; Frequency measurement; Gallium arsenide; Silicon; Surface treatment;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 1974 International
  • Conference_Location
    Washington, DC
  • ISSN
    0163-1918
  • Type

    conf

  • DOI
    10.1109/IEDM.1974.6219815
  • Filename
    6219815
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=563544