• DocumentCode
    563585
  • Title

    Preparation of SrAl2O4:Eu phosphor thin films by intense pulsed ion-beam evaporation

  • Author

    Sengiku, M. ; Oda, Y. ; Jiang, W. ; Yatsui, K. ; Ogura, Y. ; Kato, K. ; Shinbo, K. ; Kaneko, F.

  • Author_Institution
    Extreme Energy-density Research Institute, Nagaoka University of Technology, Niigata 940-2188, Japan
  • fYear
    2000
  • fDate
    20-25 June 2000
  • Firstpage
    629
  • Lastpage
    632
  • Abstract
    SrAl2O4 activated with Eu phosphors has been known to exhibit highly bright and long-lasting phosphorescence without radioactive materials. In this paper, SrAl2O4:Eu thin films have been successfully deposited on Si(100) or graphite substrate by using an intense pulsed ion-beam evaporation technique. The results of X-ray diffraction and photoluminescence suggest that SrAl2O4:Eu thin films which has a polycrystalline structure can be produced in vacuum, without substrate heating and annealing. The composition and morphology of the films have been analyzed by Rutherford backscattering and scanning electron microscope. From RBS analyze, we have obtained good stoichiometry between the target and the films prepared.
  • Keywords
    Blades; Films; Fitting; Substrates; Vacuum technology; SrAl2O4:Eu; intense pulsed ion-beam evaporation; long phosphorescence; photoluminescence; thin films;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    High-Power Particle Beams, 2000 13th International Conference on
  • Conference_Location
    Nagaoka, Japan
  • Type

    conf

  • Filename
    6219949
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=563585