• DocumentCode
    563586
  • Title

    Preperation and characterization of carbon nitride thin film by ionbeam evaporation

  • Author

    Suzuki, T. ; Shioiri, K. ; Jiang, W. ; Yatsui, K.

  • Author_Institution
    Extreme Energy-Density Research Institute, Nagaoka University of Technology, Niigata 940-2188, Japan
  • fYear
    2000
  • fDate
    20-25 June 2000
  • Firstpage
    633
  • Lastpage
    636
  • Abstract
    The preparation of a C3N4 thin film has been tried by the ion-beam evaporation method. Clear X-ray diffraction line was not observed. The hydrogen composition decreases and the nitrogen composition increases when the substrate temperature rises. The hardness of the thin film was found to be 1GPa.
  • Keywords
    Carbon; Loading; Substrates; C3N4; binding energy; hardness; the ion-beam evaporation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    High-Power Particle Beams, 2000 13th International Conference on
  • Conference_Location
    Nagaoka, Japan
  • Type

    conf

  • Filename
    6219950
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=563586