DocumentCode :
563586
Title :
Preperation and characterization of carbon nitride thin film by ionbeam evaporation
Author :
Suzuki, T. ; Shioiri, K. ; Jiang, W. ; Yatsui, K.
Author_Institution :
Extreme Energy-Density Research Institute, Nagaoka University of Technology, Niigata 940-2188, Japan
fYear :
2000
fDate :
20-25 June 2000
Firstpage :
633
Lastpage :
636
Abstract :
The preparation of a C3N4 thin film has been tried by the ion-beam evaporation method. Clear X-ray diffraction line was not observed. The hydrogen composition decreases and the nitrogen composition increases when the substrate temperature rises. The hardness of the thin film was found to be 1GPa.
Keywords :
Carbon; Loading; Substrates; C3N4; binding energy; hardness; the ion-beam evaporation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
High-Power Particle Beams, 2000 13th International Conference on
Conference_Location :
Nagaoka, Japan
Type :
conf
Filename :
6219950
Link To Document :
بازگشت